Oxide nano-engineering using MBE

Citation
Dg. Schlom et al., Oxide nano-engineering using MBE, MAT SCI E B, 87(3), 2001, pp. 282-291
Citations number
114
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
87
Issue
3
Year of publication
2001
Pages
282 - 291
Database
ISI
SICI code
0921-5107(200112)87:3<282:ONUM>2.0.ZU;2-6
Abstract
Molecular beam epitaxy (MBE) has achieved unparalleled control in the integ ration of semiconductors at the nanometer level; its use for the integratio n of oxides with similar nanoscale customization appears promising. This pa per describes the use of reactive MBE to synthesize layered oxide heterostr uctures, including new compounds and metastable superlattices, involving mo nolayer-level integration of the dielectric and ferroelectric oxides SrO, S rTiO3, BaTiO3, PbTiO3, and Bi4Ti3O12. The controlled synthesis of such laye red oxide heterostructures offers great potential for tailoring the dielect ric and ferroelectric properties of materials. Oxide nano-engineering is ac complished by supplying the incident species in the desired layering sequen ce with submonolayer composition control. Comparisons between the growth of compound semiconductors and oxides by MBE are made. (C) 2001 Published by Elsevier Science B.V.