High motility strained silicon quantum wells in modulation doped SiGe heter
ostructures, grown epitaxially on silicon substrates, offer exciting opport
unities for devices compatible withe silicon CMOS processing, having signif
icantly improved performance over their single crystal silicon counterparts
. We present results fro a collaborative academic/industrial program to dev
elop field effect transistors suitable for cryogenic circuit applications.
This work reports on the fabrication ans characterization of heterostructur
e material grown using atmospheric pressure CVD, low temperature characteri
zation of the electronic properties of the material, FET device fabrication
and FET performance at 0.3-4.2 K. (C) Published by Elsevier Science B.V.