Cryogenic field effect transistors using strained silicon quantum wells inSi : SiGe heterostructures grown by APCVD

Citation
Mj. Rack et al., Cryogenic field effect transistors using strained silicon quantum wells inSi : SiGe heterostructures grown by APCVD, MAT SCI E B, 87(3), 2001, pp. 277-281
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
87
Issue
3
Year of publication
2001
Pages
277 - 281
Database
ISI
SICI code
0921-5107(200112)87:3<277:CFETUS>2.0.ZU;2-W
Abstract
High motility strained silicon quantum wells in modulation doped SiGe heter ostructures, grown epitaxially on silicon substrates, offer exciting opport unities for devices compatible withe silicon CMOS processing, having signif icantly improved performance over their single crystal silicon counterparts . We present results fro a collaborative academic/industrial program to dev elop field effect transistors suitable for cryogenic circuit applications. This work reports on the fabrication ans characterization of heterostructur e material grown using atmospheric pressure CVD, low temperature characteri zation of the electronic properties of the material, FET device fabrication and FET performance at 0.3-4.2 K. (C) Published by Elsevier Science B.V.