Si-Ge-C growth and devices

Authors
Citation
Dw. Greve, Si-Ge-C growth and devices, MAT SCI E B, 87(3), 2001, pp. 271-276
Citations number
30
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
87
Issue
3
Year of publication
2001
Pages
271 - 276
Database
ISI
SICI code
0921-5107(200112)87:3<271:SGAD>2.0.ZU;2-0
Abstract
Silicon-germanium can now be regarded as a relatively well-established tech nology, and consequently much recent work has addressed the additional poss ibilities opened up by adding carbon to form the ternary alloy SiGeC. Carbo n in principle provides additional bandgap engineering possibilities and al so has an important impact on the stability of strained epitaxial layers. T his paper surveys recent work on the growth of Si-Ge-C epitaxial layers, wi th particular emphasis on the advantages and limitations of carbon incorpor ation. Examples of applications in which carbon leads to improved device pe rformance are discussed. (C) 2001 Elsevier Science B.V. All rights reserved .