Epitaxial issues and growth morphologies of InAlAs/InGaAs hetero structures on non-(100) InP index substrates

Citation
A. Christou et al., Epitaxial issues and growth morphologies of InAlAs/InGaAs hetero structures on non-(100) InP index substrates, MAT SCI E B, 87(3), 2001, pp. 249-255
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
87
Issue
3
Year of publication
2001
Pages
249 - 255
Database
ISI
SICI code
0921-5107(200112)87:3<249:EIAGMO>2.0.ZU;2-H
Abstract
InP substrate orientation (100), (110)A, (110)B, (I I I)A, (111)B, (112)A a nd (112)B significantly affects phase decomposition and ordering. Through T EM, AFM and photoreflectance investigations, the effect of MBE growth on th e above surfaces has been determined. Features related to phase decompositi on due to (110)A, (111)B and (112)B surfaces have been identified. Anisotro py in optical transitions in samples grown on (110)A and (110)B InP has bee n identified through photoreflectance investigations. (C) 2001 Elsevier Sci ence B.V. All rights reserved.