Growth of Si twinning superlattice

Citation
H. Hibino et T. Ogino, Growth of Si twinning superlattice, MAT SCI E B, 87(3), 2001, pp. 214-221
Citations number
33
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
87
Issue
3
Year of publication
2001
Pages
214 - 221
Database
ISI
SICI code
0921-5107(200112)87:3<214:GOSTS>2.0.ZU;2-B
Abstract
We review our attempts to grow a new type of single crystal Si epitaxially on Si(111). The new single crystal Si is a superlattice of layers that have twinned and untwinned orientations with respect to the substrate, and is c alled a twinning superlattice. The Si twinning superlattices are grown usin g the fact that Si layers grown epitaxially on Si(111) root3 x root3-B have a twinned orientation with respect to the substrate. We investigate condit ions for growing twinned epitaxial layers, and clarify that growth of twinn ed layers requires high surface B concentration and low densities of surfac e structural defects, such as steps and domain boundaries of the root3 x ro ot3 reconstruction. We also investigate the thermal stability of the twinne d layers, and clarify that the temperature at which the twinned layers are transformed into untwinned layers strongly depends on the thickness. Additi onally, we establish a technique for measuring crystallographic orientation s in surface regions in situ during growth. Based on these results, we fina lly succeed in growing the Si twinning superlattice by repeated growth of S i with a unit thickness and post-growth annealing. (C) 2001 Elsevier Scienc e B.V. All rights reserved.