The field dependence of voltage V(H) in a 2H-Nb0.9Ta0.1Se2 single crystal a
t various currents was measured and converted to current-voltage data V(I).
Then the scaling law V = alpha (I- I-c)(beta) was applied to extract the c
ritical current I-c(H) and differential resistance R-d( H). The results sho
w a peak on the differential resistance vs. H curve near H-c2 when the appl
ied current is high, but for a lower current it appears near the onset of p
eak effect region. This indicates that the new types of pinning centers gen
erated by doped Ta. significantly alter the dynamic properties of the vorte