Lateral composition modulation in GaP/InP short-period superlattices grownby solid source molecular beam epitaxy

Citation
Jd. Song et al., Lateral composition modulation in GaP/InP short-period superlattices grownby solid source molecular beam epitaxy, J APPL PHYS, 90(10), 2001, pp. 5086-5089
Citations number
22
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
90
Issue
10
Year of publication
2001
Pages
5086 - 5089
Database
ISI
SICI code
0021-8979(20011115)90:10<5086:LCMIGS>2.0.ZU;2-Y
Abstract
Transmission electron microscopy (TEM) is employed to investigate the struc tural properties of (GaP)/(InP) short-period superlattices (SPS) grown at t emperatures in the range of 425-490 degreesC by solid source molecular beam epitaxy. TEM results show that lateral composition modulation (LCM) is for med in the SPS layers grown at temperatures above 460 degreesC. Transmissio n electron diffraction results show that CuPt ordering occurs in all sample s. It is shown that the degree of order increases, reaches a maximum at 460 degreesC, and then decreases, as the growth temperature increases. Photolu minescence examination (at 9 K) shows that the samples experience a reducti on in band gap, which is in the range of 55-221 meV, as the growth temperat ure increases. The reduction is attributed to the combined effects of the L CM and CuPt-type ordering. (C) 2001 American Institute of Physics.