A 126.6-mm(2) and-type 512-Mb flash memory with 1.8-V power supply

Citation
T. Ishii et al., A 126.6-mm(2) and-type 512-Mb flash memory with 1.8-V power supply, IEEE J SOLI, 36(11), 2001, pp. 1707-1712
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN journal
0018-9200 → ACNP
Volume
36
Issue
11
Year of publication
2001
Pages
1707 - 1712
Database
ISI
SICI code
0018-9200(200111)36:11<1707:A1A5FM>2.0.ZU;2-U
Abstract
A 512-Mb flash memory, which is applicable to removable flash media of port able equipment such as audio players, has been developed. The chip Is fabri cated with a 0.18-mum CMOS process on a 126.6-mm(2) die, and uses a multile vel technique (2 bit/1 cell). The memory cell is AND-type, which is suitabl e for multilevel operation. This paper reports new techniques adopted in th e 512-Mb flash memory. First, techniques for low voltage operation are desc ribed. The charge pump, control of pumps, and the reference voltage generat or are improved to generate internal voltage stably for multilevel flash me mory. Next, a method for reducing total memory cost in the removable flash media is described. A new operation mode named read-modify-write is introdu ced on the chip. This feature makes the memory system simple, because the c ontroller does not have to track sector-erase information.