Plasma charging damage on MOS devices with gate insulator of high-dielectric constant material

Citation
Pj. Tzeng et al., Plasma charging damage on MOS devices with gate insulator of high-dielectric constant material, IEEE ELEC D, 22(11), 2001, pp. 527-529
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
0741-3106 → ACNP
Volume
22
Issue
11
Year of publication
2001
Pages
527 - 529
Database
ISI
SICI code
0741-3106(200111)22:11<527:PCDOMD>2.0.ZU;2-W
Abstract
Plasma charging effects on the gate insulator of high-dielectric constant ( k) material in MOS devices deserve to be investigated because of different trap-assisted conduction mechanisms. Plasma-induced degradation in gate-lea kage current and time to breakdown is clearly observed in this work. MOS de vice with Si3N4 film seems to have smaller degradation of gate-leakage curr ent while it suffers shorter time to breakdown as compared to Ta2O5 samples . For devices with Ta2O5 film, a larger physical thickness suffers more rel iability degradation from plasma charging damage because of the richer trap s. Thus, a smaller physical thickness of high-k dielectric film is favorabl e for sub-micron MOS devices of ULSI application.