Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

Citation
K. Shinohara et al., Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency, IEEE ELEC D, 22(11), 2001, pp. 507-509
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
0741-3106 → ACNP
Volume
22
Issue
11
Year of publication
2001
Pages
507 - 509
Database
ISI
SICI code
0741-3106(200111)22:11<507:UPIHW4>2.0.ZU;2-R
Abstract
An excellent cutoff frequency (f(t)) as high as 400 GHz was successfully re alized in 45-nm-gate pseudomorphic InGaAs/InAlAs high electron mobility tra nsistors (HEMTs). An additional vertical gate-recess suppressed short-chann el effects, while keeping good pinchoff characteristics. Gate length (L-g) dependence of electron transit time (tau (transit)) implied an increased sa turation velocity (v(s)) of 3.6 x 10(7) cm/s in the developed pseudomorphic HEMTs. This f(t) is the highest value ever reported for any transistors to date.