Growth and characterization of epitaxial ferroelectric PbZrxTi1-xO3 thin film capacitors with SrRuO3 electrodes for non-volatile memory applications

Citation
C. Guerrero et al., Growth and characterization of epitaxial ferroelectric PbZrxTi1-xO3 thin film capacitors with SrRuO3 electrodes for non-volatile memory applications, SOL ST ELEC, 45(8), 2001, pp. 1433-1440
Citations number
23
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
0038-1101 → ACNP
Volume
45
Issue
8
Year of publication
2001
Pages
1433 - 1440
Database
ISI
SICI code
0038-1101(200108)45:8<1433:GACOEF>2.0.ZU;2-W
Abstract
Non-volatile FeRAMs based on thin film ferroelectric capacitors are emergin g as an advantageous replacement for EEPROM and flash devices. In this work , ferroelectric Al/PbZrxTi1-xO3 (PZT)/SrRuO3 thin film capacitors were fabr icated and its suitability for memory applications was tested. The PZT film s, as well as the SrRuO3 bottom electrodes have been grown by pulsed laser deposition on LaAlO3(0 0 1) substrates. Epitaxial heterostructures with hig h crystalline quality were obtained. Top aluminum electrodes were thermally evaporated onto the PZT films. High dielectric constant of 700 and dielect ric loss tangent of 0.03 were obtained. Good ferroelectric behavior with an activation field for switching gamma = 308 kV/cm and a low coercive voltag e of 1.1 V at 40 Hz was observed. The reliability of the thin film capacito rs has been tested by means of pulse switching measurements. The polarizati on shows very little fatigue with cumulative switching. Built-in imprint, a rising from the use of asymmetric electrodes, along with induced imprint re lated to charge trapping at the interfaces were observed. (C) 2001 Elsevier Science Ltd. All rights reserved.