Interface states density distribution in Au/n-GaAs Schottky diodes on n-Geand n-GaAs substrates

Citation
Mk. Hudait et Sb. Krupanidhi, Interface states density distribution in Au/n-GaAs Schottky diodes on n-Geand n-GaAs substrates, MAT SCI E B, 87(2), 2001, pp. 141-147
Citations number
33
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
87
Issue
2
Year of publication
2001
Pages
141 - 147
Database
ISI
SICI code
0921-5107(20011115)87:2<141:ISDDIA>2.0.ZU;2-W
Abstract
The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/n-GaAs Schottky diodes on n-Ge substrates are investigated and compared with characteristics of diodes on GaAs substrates. The diodes show the non- ideal behavior of I-V characteristics with an ideality factor of 1.13 and b arrier height of 0.735 eV. The forward bias saturation current was found to be large (3 x 10(-10) A vs. 4.32 x 10(-12) A) in the GaAs/Ge Schottky diod es compared with the GaAs/GaAs diodes. The energy distribution of interface states was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height, though it is small. The interface states density was found to be large in the Au/n-G aAs/n-Ge structure compared with the Au/n-GaAs/n(+)-GaAs structure. The pos sible explanation for the increase in the interface states density in the f ormer structure was highlighted. (C) 2001 Published by Elsevier Science B.V .