In situ electron spin resonance observation of Si(111) 7 x 7 surface during hydrogenation process

Citation
W. Futako et al., In situ electron spin resonance observation of Si(111) 7 x 7 surface during hydrogenation process, J VAC SCI B, 19(5), 2001, pp. 1898-1900
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
19
Issue
5
Year of publication
2001
Pages
1898 - 1900
Database
ISI
SICI code
1071-1023(200109/10)19:5<1898:ISESRO>2.0.ZU;2-P
Abstract
In situ observation of the hydrogenation processes of Si(111)-7 X 7 was car ried out using an ultrahigh vacuum electron spin resonance (UHV ESR) system . The termination reaction of the surface dangling bond with hydrogen, incl uding the isolating effect of the dangling bond, was observed. The reactivi ty of hydrogen molecules with the Si(111)-7 X 7 surface is much less than t hat of oxygen. The g-value anisotropy showed that the signal originated fro m adatom dangling bonds of the Si(111)-7 X 7 structure. Thermal annealing a t a temperature higher than 400 degreesC promoted hydrogen desorption. In b oth hydrogenation and annealing processes the maximum of the effective spin density observed is approximately 3 X 10(13) cm(-2). (C) 2001 American Vac uum Society.