W. Futako et al., In situ electron spin resonance observation of Si(111) 7 x 7 surface during hydrogenation process, J VAC SCI B, 19(5), 2001, pp. 1898-1900
In situ observation of the hydrogenation processes of Si(111)-7 X 7 was car
ried out using an ultrahigh vacuum electron spin resonance (UHV ESR) system
. The termination reaction of the surface dangling bond with hydrogen, incl
uding the isolating effect of the dangling bond, was observed. The reactivi
ty of hydrogen molecules with the Si(111)-7 X 7 surface is much less than t
hat of oxygen. The g-value anisotropy showed that the signal originated fro
m adatom dangling bonds of the Si(111)-7 X 7 structure. Thermal annealing a
t a temperature higher than 400 degreesC promoted hydrogen desorption. In b
oth hydrogenation and annealing processes the maximum of the effective spin
density observed is approximately 3 X 10(13) cm(-2). (C) 2001 American Vac
uum Society.