Selective plasma nitridation and contrast reversed etching of silicon

Citation
S. Sharma et al., Selective plasma nitridation and contrast reversed etching of silicon, J VAC SCI B, 19(5), 2001, pp. 1743-1746
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
19
Issue
5
Year of publication
2001
Pages
1743 - 1746
Database
ISI
SICI code
1071-1023(200109/10)19:5<1743:SPNACR>2.0.ZU;2-M
Abstract
A new method of selectively patterning a silicon substrate with silicon dio xide and silicon nitride is demonstrated. An oxide patterned silicon substr ate is directly nitrided using a microwave generated nitrogen plasma. Upon subsequent selective wet chemical etching using KOH, the oxide is removed a nd etching proceeds into the silicon, revealing a contrast reversed pattern of the oxide. The etch resistance of the nitrided surface is maximized by increasing the microwave power, pressure, and nitridation duration. The etc h rate of silicon dioxide is negligibly affected and its etch rate is nearl y the same as before nitridation. Compositional analysis of the nitride and the nitrided oxide using x-ray photoelectron spectroscopy confirms that mi crowave plasma nitridation produces Si-N covalent bonds. (C) 2001 American Vacuum Society.