Electron transport in metal-amorphous silicon-metal memory devices

Citation
J. Hu et al., Electron transport in metal-amorphous silicon-metal memory devices, IEICE TR EL, E84C(9), 2001, pp. 1197-1201
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEICE TRANSACTIONS ON ELECTRONICS
ISSN journal
0916-8524 → ACNP
Volume
E84C
Issue
9
Year of publication
2001
Pages
1197 - 1201
Database
ISI
SICI code
0916-8524(200109)E84C:9<1197:ETIMSM>2.0.ZU;2-E
Abstract
Current-voltage characteristics of Cr-doped hydrogenated amorphous silicon- V (Cr/p(+)a-Si:H/V) analogue memory switching devices have been measured ov er a wide range of device resistance from several kilo-ohms to several hund red kilo-ohms, and over a temperature range from 13K to 300K. Both the bias and temperature dependence of the conductance show similar characteristics to that of metal-insulator heterogeneous materials (i.e. discontinuous or granular metallic films), which are analysed in terms of activated tunnelli ng mechanism. A modified filamentary structure for the Cr/p(+)a-Si:H/V swit ching devices is proposed. The influence of embedded metallic particles on memory switching is analysed and discussed.