Hydrogen tuning of (InGa)(AsN) optical properties

Citation
G. Baldassarri et al., Hydrogen tuning of (InGa)(AsN) optical properties, ACT PHY P A, 100(3), 2001, pp. 373-378
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA POLONICA A
ISSN journal
0587-4246 → ACNP
Volume
100
Issue
3
Year of publication
2001
Pages
373 - 378
Database
ISI
SICI code
0587-4246(200109)100:3<373:HTO(OP>2.0.ZU;2-O
Abstract
The effects of atomic hydrogen irradiation on the optical properties of (In Ga)(AsN) single quantum wells were investigated by means of photoluminescen ce spectroscopy. For increasing hydrogen dose, the photoluminescence band p eak energy of each nitrogen-containing sample blueshifts and for high hydro gen dose it reaches that of a corresponding nitrogen-free reference sample. This effect is accompanied by a broadening of the photoluminescence band l ine width and by a decrease in the photoluminescence efficiency. Thermal an nealing at 550 degreesC fully restores the original band gap value and the photoluminescence line width of the sample before hydrogenation. An interpr etation of these phenomena is proposed in terms of an H perturbation of the charge distribution around the strongly electronegative N atoms, leading m ost likely to the formation of H-N complexes, and to an ensuing electronic passivation of nitrogen.