Growth mechanisms and structural properties of microcrystalline silicon films deposited by catalytic CVD

Citation
C. Niikura et al., Growth mechanisms and structural properties of microcrystalline silicon films deposited by catalytic CVD, THIN SOL FI, 395(1-2), 2001, pp. 178-183
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
0040-6090 → ACNP
Volume
395
Issue
1-2
Year of publication
2001
Pages
178 - 183
Database
ISI
SICI code
0040-6090(20010903)395:1-2<178:GMASPO>2.0.ZU;2-G
Abstract
Silicon-hydrogen bonding configurations, during or after microcrystalline s ilicon (muc-Si:H) film deposition by catalytic CVD, have been investigated for the first time by real-time in-situ Fourier transform phase modulated i nfrared ellipsometry (FTPME). FTPME measurements have been performed during and after muc-Si:H film depositions using high, low or variable dilutions of silane in hydrogen. The silicon-hydrogen bonding configurations of muc-S i:H films have been correlated with their corresponding structural properti es as deduced from UV-visible ellipsometry analyses. A 4.6% efficiency has been obtained for muc-Si:H n-i-p solar cells, with the i-layer deposited by catalytic CVD at 200 degreesC on a glass substrate using a variable hydrog en dilution process. Further optimization should improve the performance of catalytic CVD muc-Si:H solar cells. (C) 2001 Elsevier Science B.V. All rig hts reserved.