The annealing behaviour of a Cs2O/GaAs(110) surface studied by electron spectroscopy

Citation
Jx. Wu et al., The annealing behaviour of a Cs2O/GaAs(110) surface studied by electron spectroscopy, J PHYS-COND, 13(39), 2001, pp. 8725-8731
Citations number
23
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
0953-8984 → ACNP
Volume
13
Issue
39
Year of publication
2001
Pages
8725 - 8731
Database
ISI
SICI code
0953-8984(20011001)13:39<8725:TABOAC>2.0.ZU;2-J
Abstract
A Cs2O overlayer was prepared by simultaneous oxygen-caesium adsorption on GaAs(110) at room temperature. Electron spectroscopy has been used to inves tigate the CS2O/GaAs surface as a function of annealing temperature. The Cs 2O-covered GaAs surface exhibits metallic behaviour. The results show that x-ray irradiation transforms Cs2O into an O- species on the top surface and facilitates the interfacial reaction forming the Cs-O-Ga bond. In the temp erature range from 300 to 620 K, the decomposition of Cs2O caused by x-ray irradiation and annealing is accompanied by growth of the O-, Cs-O-Ga, Cs-O -As, As-O and Ga-O species as well as the desorption of Cs. For further ann ealing, oxygen bonded to caesium gradually transfers to Ga and As, leading to fast Cs desorption and the formation of Ga2O3 and As2O3. Meanwhile, the evaporation of As2O3 and the reaction between the As2O3 species and substra te GaAs to form Ga2O3 Occur.