Emission properties from carbon nanotube field emitter arrays (FEAs) grownon Si emitters

Citation
T. Yoshimoto et al., Emission properties from carbon nanotube field emitter arrays (FEAs) grownon Si emitters, JPN J A P 2, 40(9AB), 2001, pp. L983-L985
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
9AB
Year of publication
2001
Pages
L983 - L985
Database
ISI
SICI code
0021-4922(20010915)40:9AB<L983:EPFCNF>2.0.ZU;2-J
Abstract
Electron emission properties of carbon nanotube field emitter arrays (CNT F EAs) having carbon nanotube emitters on the top of Si emitters were investi gated under the ultrahigh-vacuum (UHV) condition. The emission pattern from the CNT FEAs was confirmed on a phosphor screen. The emission current foll owed the Fowler-Nordheim relationship under the high emission current condi tion. With the emission current of 0.5 mA, the fluctuation of the emission current was 3% or lower at the background pressure of similar to 10(-7) Pa.