Characterization of the interface between the top Si and buried oxide in separation by implanted oxygen wafers

Citation
M. Takahashi et al., Characterization of the interface between the top Si and buried oxide in separation by implanted oxygen wafers, JPN J A P 1, 40(9A), 2001, pp. 5211-5216
Citations number
33
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
9A
Year of publication
2001
Pages
5211 - 5216
Database
ISI
SICI code
0021-4922(200109)40:9A<5211:COTIBT>2.0.ZU;2-U
Abstract
The electrical characteristics of the top Si-buried oxide interface in low- dose separation by implanted oxygen (SIMOX) wafers have been investigated f rom high-frequency and quasi-static capacitance-voltage (C-V) measurements of the buried metal oxide semiconductor (MOS) diodes proposed here. The str ucture of the interface has been also analyzed using cross-sectional transm ission electron microscopy (XTEM). SIMOX wafers with an internal thermal ox idation (ITOX) process have a fixed charge density of 2.7 x 10(10) cm(-2) a nd an interface trap density of 5 x 10(9) cm(-2) eV(-1). XTEM analysis reve aled the undulation of the interface with ITOX is about I lattice. From the small fixed charge density and the smooth interface, we conclude that the strain field in the top Si-buried oxide interface, is small, and comparable to that of thermal oxide-Si interface. The obtained results indicate that ITOX-SIMOX wafers are useful for the fabrication of fully depleted MOSFETs.