Dependence of the structural, the electrical, and the optical properties on the Ar/O-2 flow-rate ratios for SnO2 thin films grown on p-InP (100) substrates at low temperature

Citation
Tw. Kim et al., Dependence of the structural, the electrical, and the optical properties on the Ar/O-2 flow-rate ratios for SnO2 thin films grown on p-InP (100) substrates at low temperature, APPL SURF S, 182(1-2), 2001, pp. 69-76
Citations number
19
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
0169-4332 → ACNP
Volume
182
Issue
1-2
Year of publication
2001
Pages
69 - 76
Database
ISI
SICI code
0169-4332(20011005)182:1-2<69:DOTSTE>2.0.ZU;2-R
Abstract
SnO2 thin films on p-InP (1 0 0) substrates were grown at various Ar/O-2 fl ow-rate ratio by using radio-frequency magnetron sputtering at low temperat ure. Atomic force microscopy images showed that the SnO2 films grown on the InP (1 0 0) substrates at an Ar/O-2 flow rate of 0.667 and at a temperatur e of 250 degreesC had the best surface morphologies among the several sampl es, and X-ray diffraction and transmission electron microscopy (TEM) measur ements showed that the SnO2 thin films grown on the InP (1 0 0) substrates were polycrystalline layers with local epitaxy regions. An electron diffrac tion pattern and TEM measurements showed that the SnO2/p-InP heterostructur es had no significant intermixing problems at the heterointerfaces. The cap acitance-voltage measurements at room temperature showed that the majority carrier type of the nominally undoped SnO2 film was n-type and that the car rier concentration of the nominally undoped SnO2 film grown at an Ar/O-2 fl ow rate of 0.667 had a minimum value. Photoluminescence spectra showed that peaks corresponding to the donor-acceptor pair transitions were dominant a nd that the peak positions changed significantly depending on the Ar/O-2 fl ow rate. These results indicate that the SnO2 epitaxial films grown on p-In P (1 0 0) substrates at low temperature hold promise for potential electron ic devices based on InP substrates, such as superior gas sensors, and high- efficiency solar cells. (C) 2001 Elsevier Science B.V. All rights reserved.