Stress-free polishing advances copper integration with ultralow-k dielectrics

Citation
Dh. Wang et al., Stress-free polishing advances copper integration with ultralow-k dielectrics, SOL ST TECH, 44(10), 2001, pp. 101
Citations number
2
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
SOLID STATE TECHNOLOGY
ISSN journal
0038-111X → ACNP
Volume
44
Issue
10
Year of publication
2001
Database
ISI
SICI code
0038-111X(200110)44:10<101:SPACIW>2.0.ZU;2-K
Abstract
A process that eliminates nearly all the limitations of conventional CMP ha s been developed. The new technique, called ultra stress-free polishing (Ul tra SFP), allows a prompt process migration to low-k dielectric materials ( where k less than or equal to 2.2). Because this new technology does not us e pads or slurries, or have the attendant conditioning time reduces the cos ts associated with copper removal. It also provides another way to compensa te for the increased interconnection delays inc progressive reduction in fe ature sizes.