Oxidation behaviour of Cu thin films on Si wafer at 175-400 degrees C

Citation
W. Gao et al., Oxidation behaviour of Cu thin films on Si wafer at 175-400 degrees C, MATER LETT, 51(1), 2001, pp. 78-84
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167-577X → ACNP
Volume
51
Issue
1
Year of publication
2001
Pages
78 - 84
Database
ISI
SICI code
0167-577X(200110)51:1<78:OBOCTF>2.0.ZU;2-Y
Abstract
Cu thin films have started to be used as the interconnection material in ul tra-large-scale integrated (ULSI) circuits. Oxidation is a potential proble m in this application. The present work studies the oxidation behaviours of Cu thin films in a multi-layered structure of Cu/TaN/SiO2/Si at temperatur es from 175 degreesC to 400 degreesC in dry air. Below 250 degreesC, Cu is oxidized to form Cu2O with a linear kinetics. Within similar to 50 min, a c ompact, fine-grained oxide layer is formed to minimize further oxidation. A bove 275 degreesC, CuO forms following a parabolic rate law. The layer cont aining CuO is less protective than CU2O. The oxidation products formed on C u thin films are different from most previous reports on oxidation of bulk Cu metal. Oxidation mechanisms of thin Cu films were discussed based on the experimental results. (C) 2001 Elsevier Science B.V. All rights reserved.