The effects of Cu-doping in V2O5 thin film cathode for microbattery

Citation
Sc. Nam et al., The effects of Cu-doping in V2O5 thin film cathode for microbattery, KOR J CHEM, 18(5), 2001, pp. 673-678
Citations number
22
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Chemical Engineering
Journal title
KOREAN JOURNAL OF CHEMICAL ENGINEERING
ISSN journal
0256-1115 → ACNP
Volume
18
Issue
5
Year of publication
2001
Pages
673 - 678
Database
ISI
SICI code
0256-1115(200109)18:5<673:TEOCIV>2.0.ZU;2-0
Abstract
Copper-doped vanadium oxide (CuxV2O5) thin film cathode materials for a thi n film microbattery have been prepared by DC reactive magnetron co-sputteri ng with O-2/Ar ratio of 10/90 and compared with pure V2O5 thin film. The fi lm structures have been characterized by x-ray diffraction analysis, transm ission electron microscopy, Auger electron spectroscopy and X-ray photoelec tron spectroscopy, X-ray diffraction and TEM studies show that the CuxV2O5 film was amorphous and phenomenal behavior of copper present in thin film w ith substrate has been explained by thermodynamical model. Copper doping he lps to increase the thickness of the film more than 1 micrometer resulting increase of total capacity. Cycling behavior of the CuxV2O5/Lipon/Li config uration cell system was beyond 500 cycles with average capacity of 50 mu Ah /cm(2)-mum, which is higher than the pure V2O5 thin film system.