Existence and atomic arrangement of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface due to residual impurities

Citation
Hs. Lee et al., Existence and atomic arrangement of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface due to residual impurities, J APPL PHYS, 90(8), 2001, pp. 4027-4031
Citations number
26
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
90
Issue
8
Year of publication
2001
Pages
4027 - 4031
Database
ISI
SICI code
0021-8979(20011015)90:8<4027:EAAAOT>2.0.ZU;2-C
Abstract
Transmission electron microscopy (TEM) and selected area electron diffracti on pattern (SADP) measurements were carried out to investigate the ordered structures near ZnTe/GaAs heterointerfaces, and Auger electron spectroscopy (AES) and secondary ion mass spectroscopy (SIMS) measurements were perform ed to determine the compositions of the ZnTe/GaAs interfacial layer. The SA DP showed two sets of {1/2 1/2 1/2} extra spots with symmetrical intensity, and the corresponding high-resolution TEM image showed doublet periodicity in contrast of the {111} lattice planes. The results of the SADP and the h igh-resolution TEM measurements showed that a CuPt-type ordered (Cd, Zn)Te structure was observed near the ZnTe/GaAs heterointerface, and the AES and SIMS results showed that the ordered structure was formed due to the diffus ion of Cd atoms into the ZnTe layer. Two variants, one for each direction o f the doublet periodicity on the {111} lattice, were observed in the orderi ng, and each variant had its own domain structure with a similar probabilit y. The formation of the CuPt-type ordered structure near the ZnTe/GaAs hete rointerface originated from both the existence of the Cd residual impuritie s during the initial growth stage of the ZnTe epilayer and the strain relax ation of the ZnTe epilayer. These results can help to improve the understan ding of the microstructural properties of the ZnTe/GaAs heterointerface. (C ) 2001 American Institute of Physics.