Three-dimensional micromachining for microsystems by confined etchant layer technique

Citation
Jj. Sun et al., Three-dimensional micromachining for microsystems by confined etchant layer technique, ELECTR ACT, 47(1-2), 2001, pp. 95-101
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHIMICA ACTA
ISSN journal
0013-4686 → ACNP
Volume
47
Issue
1-2
Year of publication
2001
Pages
95 - 101
Database
ISI
SICI code
0013-4686(20010901)47:1-2<95:TMFMBC>2.0.ZU;2-0
Abstract
The micromachining of GaAs with three different truly three-dimensional (3D ) molds were performed by the confined etchant layer technique (CELT). The etched patterns were found, approximately, to be the negative copy of the 3 D molds. The general comparison of CELT with the existing micromachining te chniques, such as two-dimensional (2D) projection lithography and electro-d ischarge machining, was made. The replication of the complex microstructure s down to micrometer scale has been done by CELT in a single step. The phot oresist layer, together with the procedures of exposure, developing and rem oval of resist, could be eliminated. The advantages of CELT over the existi ng lithography techniques and its potential applications are discussed brie fly. It has been shown that CELT could be developed as a complementary tech nique to the existing micromachining techniques in fabricating microdevices for microsystems. (C) 2001 Elsevier Science Ltd. All rights reserved.