Fabrication of through-hole diamond membranes by plasma etching using anodic porous alumina mask

Citation
H. Masuda et al., Fabrication of through-hole diamond membranes by plasma etching using anodic porous alumina mask, EL SOLID ST, 4(11), 2001, pp. G101-G103
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
1099-0062 → ACNP
Volume
4
Issue
11
Year of publication
2001
Pages
G101 - G103
Database
ISI
SICI code
1099-0062(200111)4:11<G101:FOTDMB>2.0.ZU;2-V
Abstract
Through-hole diamond membranes with submicrometer-sized pores were fabricat ed by oxygen plasma etching through an anodic porous alumina mask. Polished polycrystalline diamond film (3 mum thick) was covered with the porous alu mina mask and was etched for about 10 min. The resulting diamond membrane a fter separating from Si had a pore size of about 300 run diam and a pore de nsity of 5.7 x 10(12) mm(-)2. This technique is simple and allows the contr olled preparation of through-hole diamond membranes by varying the dimensio ns of the alumina mask. These membranes are useful for several applications , including filtration and How-through electrolysis. (C) 2001 The Electroch emical Society.