Edge-emitting microlasers with one active layer of quantum dots

Citation
S. Rennon et al., Edge-emitting microlasers with one active layer of quantum dots, IEEE S T QU, 7(2), 2001, pp. 300-305
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
ISSN journal
1077-260X → ACNP
Volume
7
Issue
2
Year of publication
2001
Pages
300 - 305
Database
ISI
SICI code
1077-260X(200103/04)7:2<300:EMWOAL>2.0.ZU;2-3
Abstract
High performance edge-emitting microlasers with deeply etched distributed B ragg reflectors (DBRs) were fabricated on an AlGaAs-GaAs laser structure wi th a single GaInAs quantum dot (QD) active layer. Mirror reflectivities wel l above 90% were achieved by third-order narrow air-gap Bragg reflectors wi th lambda /4 air-gaps. DBR lasers with 160-mum-long cavities and cleaved mi rrors on one side show differential efficiencies of 0.87 W/A and output pow ers of more than 50 mW at 980-nm emission wavelength in continuous wave (CW ) operation at room temperature. With deeply etched DBRs on both sides of t he cavity CW operating microlasers with cavity lengths down to 16 mum could be realized with a minimum threshold current of 1.2 mA for a 30-mum cavity length. All lasers are emitting at the QD ground state at room temperature . Twenty-pm-long devices show CW threshold currents of about 3 mA, output p owers above I mW, and single mode emission with > 25 dB, sidemode suppressi on ratios, First, high-frequency measurements were performed proving that t hese QD microlasers are well suited for large-scale integrated high-speed o ptical data processing with modulation frequencies well above 10 GHz.