Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer

Citation
Jk. Sheu et al., Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer, IEEE ELEC D, 22(10), 2001, pp. 460-462
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
0741-3106 → ACNP
Volume
22
Issue
10
Year of publication
2001
Pages
460 - 462
Database
ISI
SICI code
0741-3106(200110)22:10<460:LVOILD>2.0.ZU;2-M
Abstract
InGaN/GaN multiple-quantum-well light-emitting diode (LED) structures inclu ding a Si-doped In0.23Ga0.77N/GaN short-period superlattice (SPS) tunneling contact layer were grown by metalorganic vapor phase epitaxy. The In0.23Ga 0.77N/GaN(n(+))-GaN(p) tunneling junction, which the low-resistivity n(+)-I n0.3Ga0.7N/GaN SPS instead of high-resistivity p-type GaN as a top contact layer, allows the reverse-biased tunnel junction to form a "ohmic" contact. In this structure, the sheet electron concentration of Si-doped In0.23Ga0. 77N/GaN SPS is around I x 10(14)/cm(2), leading to an averaged electron con centration of around 1 x 10(20)/cm(3). This high-conductivity SPS would lea d to a low-resistivity ohmic contact (Au/Ni/SPS) of LED. Experimental resul ts indicate that the LEDs can achieve a lower operation voltage of around 2 .95 V, i.e., smaller than conventional devices which have an operation volt age of about 3.8 V.