Initial anomalous diffusion of boron atoms at low-temperature annealing

Citation
T. Saito et al., Initial anomalous diffusion of boron atoms at low-temperature annealing, ELEC C JP 2, 84(10), 2001, pp. 59-64
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
ISSN journal
8756-663X → ACNP
Volume
84
Issue
10
Year of publication
2001
Pages
59 - 64
Database
ISI
SICI code
8756-663X(2001)84:10<59:IADOBA>2.0.ZU;2-9
Abstract
Experiments on the transient enhanced diffusion (TED) of boron in superlatt ice silicon wafers, for the first time demonstrated the existence of the an omalous enhanced diffusion of boron at the very early stage of low-temperat ure annealing at locations situated deeper than the implantation damage zon e. It was confirmed that this phenomenon is caused by free self-interstitia l silicon atoms present in the implantation tail region. (C) 2001 Scripta T echnica.