Magnetization of Sn1-xGdxTe - art. no. 115210

Citation
M. Gorska et al., Magnetization of Sn1-xGdxTe - art. no. 115210, PHYS REV B, 6411(11), 2001, pp. 5210
Citations number
25
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
0163-1829 → ACNP
Volume
6411
Issue
11
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010915)6411:11<5210:MOS-AN>2.0.ZU;2-J
Abstract
The magnetization of Sn1-xGdxTe for different concentrations of holes and x values up to 0.1 has been measured by means of both the vibrating sample m agnetometer and cantilever techniques. The cantilever measurements were car ried out at mK temperatures. The strength of the pair exchange interaction, -J(P)/k(B), was found to depend on the concentration of holes with a maxim um value of about 1 K in the "resonant" concentration range between 2.6 x 1 0(20) cm(-3) and 4.2 x 10(20) cm(-3). No magnetization steps were observed even at temperatures of 30 mK. We suggest that this absence of steps is a r esult of the long range of the exchange interaction in this system.