Tunneling-assisted thermalization and recombination of nonequilibrium carriers in localized states: Application to the frequency-resolved drift mobility in amorphous silicon - art. no. 125208

Citation
K. Hattori et al., Tunneling-assisted thermalization and recombination of nonequilibrium carriers in localized states: Application to the frequency-resolved drift mobility in amorphous silicon - art. no. 125208, PHYS REV B, 6412(12), 2001, pp. 5208
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
0163-1829 → ACNP
Volume
6412
Issue
12
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010915)6412:12<5208:TTARON>2.0.ZU;2-J
Abstract
This article presents a theory for nonequilibrium carrier kinetics in amorp hous semiconductors containing localized states among which finite interact ions are allowed via tunneling. Fourier domain solutions are explored inten sively in order to quantitatively interpret the frequency-dependent photoca rrier drift mobility determined by modulated photoconductivity measurement. The theoretical analysis is in agreement with experiments carried out for hydrogenated amorphous silicon over a wide range of frequencies and tempera tures, and discloses that the inclusion of tunneling transitions considerab ly accelerates carrier thermalization in localized band-tail states. A gene ralized recombination model that considers both direct capture of band carr iers and tunneling transfer of band-tail carriers into recombination center s is also discussed in detail, suggesting that even for room temperature, t he tunneling recombination takes place preferentially.