Growth of porous columnar alpha-GaN layers on c-plane Al2O3 by MOCVD usingbisazido dimethylaminopropyl gallium as single source precursor

Citation
A. Wohlfart et al., Growth of porous columnar alpha-GaN layers on c-plane Al2O3 by MOCVD usingbisazido dimethylaminopropyl gallium as single source precursor, J PHYS IV, 11(PR3), 2001, pp. 683-687
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
1155-4339 → ACNP
Volume
11
Issue
PR3
Year of publication
2001
Pages
683 - 687
Database
ISI
SICI code
1155-4339(200108)11:PR3<683:GOPCAL>2.0.ZU;2-I
Abstract
We report the growth of highly crystalline and oriented alpha -GaN layers s howing a porous-ae microstructure. Employing specific CVD conditions, GaN l ayers with such morphological features were obtained and characterized in d etail by XRD methods. The layer composition was analysed by XPS, AES as wel l as RES, and the morphology was investigated by SEM and AFM measurements.