Growth of InN whiskers from single source precursor

Citation
A. Devi et al., Growth of InN whiskers from single source precursor, J PHYS IV, 11(PR3), 2001, pp. 577-584
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
1155-4339 → ACNP
Volume
11
Issue
PR3
Year of publication
2001
Pages
577 - 584
Database
ISI
SICI code
1155-4339(200108)11:PR3<577:GOIWFS>2.0.ZU;2-D
Abstract
The group-III nitrides GaN, InN, AIN and their alloys InxGa1-xN, AlxGa1-xN have recently acquired technological importance for LED and laser applicati ons. However, InN has a low decomposition temperature and the growth of cry stalline InN material at low temperatures is difficult. One of the approach es is to design single source precursors that decompose at low temperatures . Single source precursors of the type N3In[(CH2)(3)NMe2](2) were developed and the growth of crystalline InN films with preferred orientation was ach ieved using this compound. However employing specific CVD process parameter s we were able to grow InN whiskers consistently by CVD using a cold wall C VD reactor on sapphire substrates at 500 degreesC. These whiskers were char acterised by XRD, SEM, EDX and TEM measurements.