Chemical vapour deposition of copper using copper(II) alkoxides

Citation
R. Becker et al., Chemical vapour deposition of copper using copper(II) alkoxides, J PHYS IV, 11(PR3), 2001, pp. 569-575
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
1155-4339 → ACNP
Volume
11
Issue
PR3
Year of publication
2001
Pages
569 - 575
Database
ISI
SICI code
1155-4339(200108)11:PR3<569:CVDOCU>2.0.ZU;2-N
Abstract
Copper metal thin films were grown via a CVD process on SiO2/Si substrates using different copper(II) dialkylamino alkoxides of the general type (Cu[O CH(R)CH2NR2'](2) where R = R ' = CH3 (1); R = CH3, R ' = CH2CH3 (2); R = CH 2NMe2, R ' = CH3 (3) as precursors. The solid state structure of the new co mpound 2 was determined by x-ray single crystal analysis. Thermal analysis of the potential precursors gave information on their thermal decomposition characteristics and copper films deposited via hotwall CVD, using compound 1 as precursor, were analyzed by XPS, XRD, AFM and SEM, confirming element al copper as the only product obtained on the substrate. NMR analysis of th e gaseous products collected in the cooling trap proved the oxidation of on e ligand molecule by the copper.