Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors

Citation
H. Parala et al., Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors, J PHYS IV, 11(PR3), 2001, pp. 473-479
Citations number
31
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
JOURNAL DE PHYSIQUE IV
ISSN journal
1155-4339 → ACNP
Volume
11
Issue
PR3
Year of publication
2001
Pages
473 - 479
Database
ISI
SICI code
1155-4339(200108)11:PR3<473:SOGPIP>2.0.ZU;2-Z
Abstract
The filling of porous materials Re molecular sieves by semiconducting mater ials is explored as a concept to fabricate novel mesoscopic systems such as quantum wires, quantum dots for possible optoelectronic and photonic appli cations. The dimension and arrangement of the incorporated material is dict ated by the shape, size and order of crystallinity of the pores of the temp late that is being used. GaN is one such interesting semiconducting materia l whose fabrication in thin film form is well developed. However GaN in the form of nanoparticles has not been explored with much success and there ar e very few reports so far. This work represents a single source precursor a pproach for the synthesis of GaN nanoparticles by chemical vapour infiltrat ion (CVI). The formation of GaN using MCM-41 as a porous host template and the characterisation of the nanoparticles by N-2 Sorption studies (BET), XR D, TEM, EDX, Ga-71 NMR, elemental analysis will be addressed in this paper.