Microstructural and optical properties of SnO2 thin films grown on heavilydoped n-InP(100) substrates

Citation
Tw. Kim et al., Microstructural and optical properties of SnO2 thin films grown on heavilydoped n-InP(100) substrates, APPL PHYS L, 79(14), 2001, pp. 2187-2189
Citations number
23
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
79
Issue
14
Year of publication
2001
Pages
2187 - 2189
Database
ISI
SICI code
0003-6951(20011001)79:14<2187:MAOPOS>2.0.ZU;2-W
Abstract
Bright-field transmission electron microscopy (TEM) and high-resolution TEM images and an electron diffraction pattern showed that the SnO2 layers gro wn on heavily doped n-InP(100) substrates were nanoscale thin films. X-ray photoelectron spectroscopy showed that the positions of the peaks correspon ding to the Sn 3d(5/2), the Sn 3d(3/2), and the O 1s levels for the SnO2 th in film were slightly shifted toward the lower energy side in comparison wi th those for bulk SnO2. The refractive indices obtained by spectroscopic el lipsometry were above 2.2 around the SnO2 energy gap of the SnO2 thin films . The maximum intensity of the optical transmittance for the SnO2 nanoscale thin film with 3939 Angstrom thickness was above 90%. (C) 2001 American In stitute of Physics.