On the mechanism of hydrogen sensing with SiO2 modificated high temperature Ga2O3 sensors

Citation
T. Weh et al., On the mechanism of hydrogen sensing with SiO2 modificated high temperature Ga2O3 sensors, SENS ACTU-B, 78(1-3), 2001, pp. 202-207
Citations number
4
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
SENSORS AND ACTUATORS B-CHEMICAL
ISSN journal
0925-4005 → ACNP
Volume
78
Issue
1-3
Year of publication
2001
Pages
202 - 207
Database
ISI
SICI code
0925-4005(20010830)78:1-3<202:OTMOHS>2.0.ZU;2-2
Abstract
On the way to understand the detection mechanisms inside a high temperature metal oxide sensor with Ga2O3 as its sensitive material and a silicon diox ide top layer for increasing the sensitivity to hydrogen the sensor is expo sed to dry and oxygen free Ps mixtures. While the absence of oxygen decreas es the selectivity of the sensor dramatically, dry air is without a major i nfluence to the selectivity. The detection of hydrogen is possible in all c ases. For additional investigations an electrode was mounted directly on to p of the sensor influencing the space charges inside the sensor, which seem s to be the major detection mechanism. This should lead to a further optimi zation of the hydrogen sensor, especially increasing the selectivity, and c haracterization of the environments the sensor can be utilized in. (C) 2001 Elsevier Science B.V. All rights reserved.