Precision d-spacing measurement of GaAs single crystals with synchrotron radiation

Citation
Y. Okada et al., Precision d-spacing measurement of GaAs single crystals with synchrotron radiation, NUCL INST A, 467, 2001, pp. 1037-1040
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
0168-9002 → ACNP
Volume
467
Year of publication
2001
Part
2
Pages
1037 - 1040
Database
ISI
SICI code
0168-9002(20010721)467:<1037:PDMOGS>2.0.ZU;2-T
Abstract
A wavelength-selective silicon monolithic (+, -, - +) channel-cut monochrom ator and a system for high-precision measurements of lattice spacing were d eveloped at the Photon Factory BL3C2. A computer program was developed to a llow us to measure automatically more than 30 different samples within a si ngle run. The full-width at half-maximum of the rocking curves of a couple of (8 0 0) GaAs reflections is 17-20 arc-sec. Using this system, it is poss ible to carry out precise lattice spacing measurements of GaAs single cryst als with high boron concentrations by the Bond method. The standard deviati ons for the measurements of one sample were estimated by Deltaa/a= 4 x 10(- 8). Anomalous reductions in lattice spacing have been found below a boron c oncentration of 1 x 10(19) cm(-3). (C) 2001 Elsevier Science B.V. All right s reserved.