Dependence of the exciton transition on the CdTe well width in CdTe/ZnTe strained single quantum wells

Citation
Sh. Oh et al., Dependence of the exciton transition on the CdTe well width in CdTe/ZnTe strained single quantum wells, J KOR PHYS, 39(3), 2001, pp. 458-461
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
0374-4884 → ACNP
Volume
39
Issue
3
Year of publication
2001
Pages
458 - 461
Database
ISI
SICI code
0374-4884(200109)39:3<458:DOTETO>2.0.ZU;2-M
Abstract
CdTe/ZnTe strained single quantum well structures with various CdTe well wi dths were grown on GaAs (100) substrates by using the hot wall epitaxy tech nique. X-ray diffraction measurements were performed to characterize the st ructural properties of the CdTe/ZnTe quantum wells. Photoluminescence (PL) measurements on the CdTe/ZnTe strained single quantum wells showed that the sharp excitonic peaks corresponding to the transitions from the 1st electr onic subband to the 1st heavy-hole band (E1-HH1) were shifted to lower ener gy with increasing well width. The electronic subband energies and the wave functions were calculated by using an envelope function approximation takin g into account the strain effects, and the theoretical values of the (E1-HH 1) interband transitions were in reasonable agreement with those obtained f rom the (E1-HH1) excitonic transitions of the PL spectra. These results ind icate that CdTe/ZnTe strained single quantum wells hold promise for potenti al applications in short-wavelength optoelectronic devices.