Oxygen-holes creating different electronic phases in Fe4+-oxides: successful growth of single crystalline films of SrFeO3 and related perovskites at low oxygen pressure

Citation
N. Hayashi et al., Oxygen-holes creating different electronic phases in Fe4+-oxides: successful growth of single crystalline films of SrFeO3 and related perovskites at low oxygen pressure, J MAT CHEM, 11(9), 2001, pp. 2235-2237
Citations number
26
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS CHEMISTRY
ISSN journal
0959-9428 → ACNP
Volume
11
Issue
9
Year of publication
2001
Pages
2235 - 2237
Database
ISI
SICI code
0959-9428(2001)11:9<2235:OCDEPI>2.0.ZU;2-P
Abstract
We have succeeded for the first time in preparing single crystalline films of SrFeO3, CaFeO3, and Sr2FeCoO6, perovskites containing Fe4+, at low oxyge n pressure of only 1 kPa, and the dominance of oxygen hole character in tra nsport phenomena was indicated by the positive Hall coefficient of metallic SrFeO3.