Investigation of ion implantation for fabrication of p-n junctions with modified silicon surface for photovoltaic devices

Citation
B. Jaroszewicz et al., Investigation of ion implantation for fabrication of p-n junctions with modified silicon surface for photovoltaic devices, VACUUM, 63(4), 2001, pp. 721-724
Citations number
3
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
VACUUM
ISSN journal
0042-207X → ACNP
Volume
63
Issue
4
Year of publication
2001
Pages
721 - 724
Database
ISI
SICI code
0042-207X(20010816)63:4<721:IOIIFF>2.0.ZU;2-J
Abstract
Implantation, utilizing self-amorphizing phosphorus ion (n(+) layer) or amo rphizing fluorine with subsequent boron ions (p(+) layer), for fabrication of n(+)-p and p(+)-n junctions, respectively, have been simulated and perfo rmed. Additionally, silicon surface layer modification using different meth ods has been investigated to reduce light reflection and to improve light t rapping of the photocell. It has been shown that chemical texturing of the surface influences performance of the photo-voltaic devices. We have found that the layers textured in an acidic solution improve the device performan ce considerably, as compared with the reference samples, while the samples textured by etching in an alkaline solution decrease its performance. On th e other side, performance of devices with the surface layers amorphized by implantation of light (F+) or heavy (Kr2+) ions decreased. The advantages a nd disadvantages of two technological junction schemes (namely, n(+)-p and p(+)-n) and surface modification variants were analyzed. (C) 2001 Elsevier Science Ltd. All rights reserved.