On the switching behaviour of post-breakdown conduction in ultra-thin SiO2films

Citation
Tp. Chen et al., On the switching behaviour of post-breakdown conduction in ultra-thin SiO2films, SEMIC SCI T, 16(9), 2001, pp. 793-797
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
0268-1242 → ACNP
Volume
16
Issue
9
Year of publication
2001
Pages
793 - 797
Database
ISI
SICI code
0268-1242(200109)16:9<793:OTSBOP>2.0.ZU;2-M
Abstract
Switching between well defined states of post-breakdown conduction in ultra -thin SiO2 films is observed in both I-V and time-domain voltage (current) measurements under constant low bias current (voltage). Using I-V measureme nts, single switching with two conduction states and multi le switching wit h more than two states was observed. The I-V characteristic of each state c an be well modelled by the power law, and a convincing linear dependence is observed for each state when the I-V characteristics are plotted on a log- log scale. The switching behaviour is explained in terms of the on/off stat e of percolation paths of neutral electron traps due to de-trapping/trappin g of the traps at certain SiO2 lattice sites (strategic positions) during t he measurements.