Depth-dependence of the bulk etch rate of gamma-ray irradiated CR-39 trackdetector

Citation
T. Yamauchi et al., Depth-dependence of the bulk etch rate of gamma-ray irradiated CR-39 trackdetector, RADIAT MEAS, 34(1-6), 2001, pp. 85-89
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
RADIATION MEASUREMENTS
ISSN journal
1350-4487 → ACNP
Volume
34
Issue
1-6
Year of publication
2001
Pages
85 - 89
Database
ISI
SICI code
1350-4487(200106)34:1-6<85:DOTBER>2.0.ZU;2-B
Abstract
The depth-dependent bulk etch rate has been examined for the gamma-irradiat ed CR-39 at doses ranging from 20 to 100 kGy. The thickness of the damaged region in gamma-irradiated CR-39 plastics, in which the bulk etch rate was significantly enhanced, was found to be limited in the thin layer near the surface and decreases with increasing the dose-rate, while it barely depend on the total dose. This indicates that it is possible to apply CR-39 plast ics as high dose gamma-dosimeter by assessing both the bulk etch rate in th e damaged region and its thickness in principle. (C) 2001 Elsevier Science Ltd. All rights reserved.