Field electron emission from silicon nanoprotrusions

Citation
K. Sawada et al., Field electron emission from silicon nanoprotrusions, JPN J A P 2, 40(8A), 2001, pp. L832-L834
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
8A
Year of publication
2001
Pages
L832 - L834
Database
ISI
SICI code
0021-4922(20010801)40:8A<L832:FEEFSN>2.0.ZU;2-M
Abstract
Nanometer-scale silicon field emitters with the highest packing density wer e fabricated successfully using a self-organized selective oxidation techni que. The diameter at the bottom of each nano-emitter was 20-30 nm, its heig ht was 3-5 nm, and the radius of the apex of the protrusion was speculated to be 3-10 nm. The density was about 3-5 x 10(11) tips/cm(2), which is the highest value reported in the literature. Emission characteristics were mea sured by a diode structure without gate electrodes for simplicity. It was f ound that the field emission current was detected at a much lower anode vol tage than the conventional cone-shaped Si emitters and the emission current depends on the microscopic shape controlled by oxidation conditions.