Influence of vacuum-annealing process on the secondary electron emission coefficient (gamma) from a MgO protective layer

Citation
Jm. Jeoung et al., Influence of vacuum-annealing process on the secondary electron emission coefficient (gamma) from a MgO protective layer, JPN J A P 1, 40(3A), 2001, pp. 1433-1434
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
3A
Year of publication
2001
Pages
1433 - 1434
Database
ISI
SICI code
0021-4922(200103)40:3A<1433:IOVPOT>2.0.ZU;2-E
Abstract
The secondary electron emission coefficient (gamma) of vacuum-annealed MgO films has been investigated using a gamma -focused ion beam (gamma -FIB) sy stem. The vacuum-annealed MgO films have been found to have higher gamma va lues from 0.05 to 0.12 than those from 0.03 to 0.06 for as-deposited MgO fi lms for operating Ne+ ions whose acceleration voltages ranged from 50 V to 200 V. It is shown that the gamma for the as-deposited MgO protective layer is significantly decreased by the influence of holding in air since the hy droxyl OH groups are absorbed onto the MgO surface from the atmospheric air . It is also observed that the secondary electron emission coefficient gamm a for the vacuum-annealed MgO protective layer is less influenced by holdin g in air than that for the as-deposited MgO protective layer. Based on thes e findings, it is concluded that the vacuum-annealed MgO protective layer p lays an important role in lowering the firing voltage in alternating curren t-plasma display panel (AC-PDP) compared with the as-deposited MgO protecti ve layer or the as-deposited MgO protective layer held in air.