Lattice distortion in GaAsP heteroepitaxially grown on GaP and Si by metalorganic molecular beam epitaxy

Citation
K. Nakamura et al., Lattice distortion in GaAsP heteroepitaxially grown on GaP and Si by metalorganic molecular beam epitaxy, JPN J A P 1, 40(3A), 2001, pp. 1377-1378
Citations number
4
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
3A
Year of publication
2001
Pages
1377 - 1378
Database
ISI
SICI code
0021-4922(200103)40:3A<1377:LDIGHG>2.0.ZU;2-4
Abstract
Lattice distortion in GaAsP layers has been studied using high-resolution X -ray diffractometry. GaAsP layers were grown on GaP and Si substrates by me talorganic molecular beam epitaxy (MOMBE), using triethylgallium (TEGa), te rtiarybutylarsine (TBAs) and phosphine (PH3) as source gases. The lattice c onstants of epitaxial layers were obtained from the results of X-ray (004) and (115) diffraction. The lattice constant parallel to the growth surface (a(parallel to)) was longer than the one perpendicular to the surface (a(pe rpendicular to)). The GaAsP epi-layer was two-dimensionally strained in the growth plane. This is explained by the difference of thermal expansion coe fficients. The distortion in the GaAsP epi-layers on a Gap substrate was sm aller than that on a Si substrate.