New trap-assisted band-to-band tunneling induced gate current model for p-channel metal-oxide-semiconductor field effect transistors with sub-3 nm oxides

Citation
Hm. Lee et al., New trap-assisted band-to-band tunneling induced gate current model for p-channel metal-oxide-semiconductor field effect transistors with sub-3 nm oxides, JPN J A P 1, 40(3A), 2001, pp. 1218-1221
Citations number
5
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
3A
Year of publication
2001
Pages
1218 - 1221
Database
ISI
SICI code
0021-4922(200103)40:3A<1218:NTBTIG>2.0.ZU;2-D
Abstract
A new trap-assisted band-to-band tunneling (TAB) gate current model is prop osed to describe the new observed band-to-band tunneling (BBT) induced gate current characteristics of p-channel metal-oxide-semiconductor field effec t transistors (PMOSFET's) with ultra-thin gate oxide. Based on this new TAB gate current model, the off-state gate currents of PMOSFET's with various sub-3 nm gate oxides can be well characterized, while the conventional BBT current model is no longer applicable in this regime.