Hm. Lee et al., New trap-assisted band-to-band tunneling induced gate current model for p-channel metal-oxide-semiconductor field effect transistors with sub-3 nm oxides, JPN J A P 1, 40(3A), 2001, pp. 1218-1221
A new trap-assisted band-to-band tunneling (TAB) gate current model is prop
osed to describe the new observed band-to-band tunneling (BBT) induced gate
current characteristics of p-channel metal-oxide-semiconductor field effec
t transistors (PMOSFET's) with ultra-thin gate oxide. Based on this new TAB
gate current model, the off-state gate currents of PMOSFET's with various
sub-3 nm gate oxides can be well characterized, while the conventional BBT
current model is no longer applicable in this regime.