Preparation of RhO2 thin films by reactive sputtering and their characterizations

Citation
K. Kato et al., Preparation of RhO2 thin films by reactive sputtering and their characterizations, JPN J A P 1, 40(4A), 2001, pp. 2399-2402
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
4A
Year of publication
2001
Pages
2399 - 2402
Database
ISI
SICI code
0021-4922(200104)40:4A<2399:PORTFB>2.0.ZU;2-W
Abstract
Thin films of RhO2, which belongs to the family of conducting platinum grou p metal oxides, were prepared by reactive sputtering. Influences of sputter ing parameters, such as rf power and substrate temperature, and postdeposit ion annealing on crystallinity, chemical bonding state and resistivity of t he deposited films were studied, in order to obtain low-resistivity RhO2 th in films. The resistivity of the deposited films decreased with decreasing rf power. Plasma emission measurement suggested that oxidation of Rh procee ded under the low rf power condition. Poorly- crystallized conducting RhO2 thin films with resistivity of 300-500 mu Omega cm were prepared at substra te temperatures below 150 degreesC; the resistivity of the films increased with increasing substrate temperature above 150 degreesC due to the formati on of semiconducting Rh2O3. After postdeposition annealing in oxygen atmosp here at up to 700 degreesC, well-crystallized RhO2 films were formed, and t he minimum resistivity of 80 mu Omega cm was obtained.