Reconstructions of 6H-SiC(0001) surfaces studied by scanning tunneling microscopy and reflection high-energy electron diffraction

Citation
Y. Hisada et al., Reconstructions of 6H-SiC(0001) surfaces studied by scanning tunneling microscopy and reflection high-energy electron diffraction, JPN J A P 1, 40(4A), 2001, pp. 2211-2216
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
40
Issue
4A
Year of publication
2001
Pages
2211 - 2216
Database
ISI
SICI code
0021-4922(200104)40:4A<2211:RO6SSB>2.0.ZU;2-0
Abstract
Surface reconstructions and surface decomposition of 6H-SiC(0001) covered w ith Si were observed using scanning tunneling microscopy (STM) and reflecti on high-energy electron diffraction (RHEED). The 3 x 3 structure terminated with Si atoms was obtained by annealing at 1050 degreesC; this changed to a mixture of the graphite 1 x 1 and SiC 6 x 6 by annealing at 1300 degreesC . The graphite 1 x 1 consisted of two types of graphite lattices, rotated 3 0 degrees with respect to the SiC lattice and along the SiC lattice.. The S iC 6 x 6 was terminated with C atoms. The RHEED spots due to the double dif fraction between the SiC (02) spot and the graphite spot rotated by 30 degr ees with respect to the SiC lattice were observed. The thickness of the gra phite layer and the area of the graphite region increased by successive ann ealing. String-shaped structures were formed along the steps at 1450 degree sC. Further annealing up to 1800 degreesC resulted in the formation of a th ick graphite layer and amorphous carbon.